Short-Period ZnTe-Zn(S, Te) Superlattices
S. Tiong-Palisoc, M. Korn, and W. Faschinger
Physics Department, De La Salle University, Manila, Philippines
Physikalisches Institut, Universitaet Wuerzburg, Germany
ABSTRACT
ZnTe-Zn(S,Te) short-period superlattices were grown on (001) GaAs substrates with very good structural quality. The growth conditions weer found to be quite reproducible, leading to a series of samples with periods between 12 Å and 29 Å. Characterization of the samples were peudomorphically grown. The relaxation behavior was strongly influenced by the ZnTe well-width with two critical observed ZnTe-thicknesses.
The II-VI semiconductor ZnSe has the same crystal structure and nearly the same lattice constant as GaAs and AIxGa1-x. As two of the semiconductors which form the base of optoelectronic devices in the near-infrared and red spectral range. With ZnSe emitting blue to green, high quality light emitters and detectors are developed as well. . . . . read more
